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    Methods for sensitizing photoresist using flood exposures
    1.
    发明授权
    Methods for sensitizing photoresist using flood exposures 有权

    公开(公告)号：US11061332B2

    公开(公告)日：2021-07-13

    申请号：US16136688

    申请日：2018-09-20

    Applicant: Tokyo Electron Limited

    Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Seiji Nagahara

    IPC: G03F7/20 ,  G03F7/40 ,  G03F7/004 ,  G03F7/09

    Abstract: A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm2-200 mJ/cm2, and a flood exposure at a wavelength of 200 nm-420 nm and a dose of 0.5 J/cm2-20 J/cm2. The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and ≤5 nm.

    METHODS FOR SENSITIZING PHOTORESIST USING FLOOD EXPOSURES
    2.
    发明申请
    METHODS FOR SENSITIZING PHOTORESIST USING FLOOD EXPOSURES 审中-公开

    公开(公告)号：US20190094698A1

    公开(公告)日：2019-03-28

    申请号：US16136688

    申请日：2018-09-20

    Applicant: Tokyo Electron Limited

    Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Seiji Nagahara

    IPC: G03F7/20 ,  G03F7/40

    Abstract: A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm2-200 mJ/cm2, and a flood exposure at a wavelength of 200 nm-420 nm and a dose of 0.5 J/cm2-20 J/cm2. The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and ≤5 nm.

    Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents
    3.
    发明授权
    Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents 有权
    使用光分解剂的定向自组装应用中的化学外延

    公开(公告)号：US08980538B2

    公开(公告)日：2015-03-17

    申请号：US13830859

    申请日：2013-03-14

    Applicant: Tokyo Electron Limited

    Inventor： Mark H. Somervell ,  Michael A. Carcasi

    IPC: G03F7/26 ,  G03F7/11 ,  G03F7/004 ,  G03F7/00 ,  G03F7/039 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G03F7/11 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/168 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

    Abstract: A method of forming a layered substrate comprising a self-assembled material is provided. The method includes forming a first layer of material on a substrate, forming a layer of a radiation sensitive material on the first layer of material, imaging the layer of the radiation sensitive material with patterned light, heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature, developing the imaged layer, and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component.

    Abstract translation: 提供了一种形成包括自组装材料的层状衬底的方法。 该方法包括在衬底上形成第一材料层，在第一材料层上形成辐射敏感材料层，用图案化光成像辐射敏感材料层，将辐射敏感材料层加热到 温度等于或高于交联反应温度，显影成像层，形成嵌段共聚物图案。 辐射敏感材料包含至少一种选自（a）可光分解交联剂，（b）光碱发生剂或（c）可光分解基质的光敏组分; 和可交联聚合物，其中通过图案化光的成像提供了由具有由具有完整光敏组分的实质部分的区域包围的分解的光敏部件的实质部分的第一区域限定的图案。

    Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
    4.
    发明授权
    Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists 有权

    公开(公告)号：US12165870B2

    公开(公告)日：2024-12-10

    申请号：US16030153

    申请日：2018-07-09

    Applicant: Tokyo Electron Limited

    Inventor： Steven Scheer ,  Michael A. Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Joshua S. Hooge

    IPC: G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

    Method and system for controlling a spike anneal process
    8.
    发明授权
    Method and system for controlling a spike anneal process 有权
    用于控制尖峰退火工艺的方法和系统

    公开(公告)号：US09085045B2

    公开(公告)日：2015-07-21

    申请号：US13662524

    申请日：2012-10-28

    Applicant: Tokyo Electron Limited

    Inventor： Steven Scheer ,  Michael A. Carcasi

    IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/44 ,  B23K26/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67

    CPC classification number: H01L21/324 ,  B23K26/352 ,  H01L21/268 ,  H01L21/67103 ,  H01L21/67115

    Abstract: Provided is a method and system for controlling a spike anneal process on a substrate, comprising selecting one or more objectives, one or more absorbance layers, a technique of modifying absorption of the selected one or more absorbance layers, one or more wavelengths used in a heating device. A substrate modified with the selected technique of modifying absorption is provided. The spike anneal process is performed on the substrate using the selected heating device and selected spike anneal process variables. One or more of the spike anneal process variables, the selected technique of the modifying absorption, the selected one or more wavelengths, and/or the selected heating device are adjusted in order to meet the one or more objectives of the spike anneal process.

    Abstract translation: 提供了一种用于控制衬底上的尖峰退火工艺的方法和系统，包括选择一个或多个目标，一个或多个吸收层，修饰所选择的一个或多个吸收层的吸收的技术，一个或多个波长 加热装置。 提供了用所选择的改性吸收技术改性的底物。 使用所选择的加热装置和选定的尖峰退火工艺变量在基板上进行尖峰退火工艺。 调整一个或多个尖峰退火工艺变量，所选择的修饰吸收的技术，所选择的一个或多个波长和/或所选择的加热装置，以便满足尖峰退火工艺的一个或多个目标。

    Critical dimension control by use of a photo agent
    9.
    发明授权
    Critical dimension control by use of a photo agent 有权

    公开(公告)号：US10096528B2

    公开(公告)日：2018-10-09

    申请号：US15594187

    申请日：2017-05-12

    Applicant: Tokyo Electron Limited

    Inventor： Anton J. deVilliers ,  Michael A. Carcasi

    IPC: H01L21/66 ,  H01L21/027 ,  H01L21/311 ,  G03F7/00 ,  G03F7/20 ,  G03F7/40

    Abstract: A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation-sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer over the patterned layer, the overcoat layer containing a photo agent selected from a photosensitizer generator compound, a photosensitizer compound, a photoacid generator compound, a photoactive agent, an acid-containing compound, or a combination of two or more thereof. The overcoat layer is then exposed to electromagnetic radiation, wherein the dose of electromagnetic radiation applied to different regions of the substrate is varied, and then the overcoat layer and patterned layer are heated. The method further includes developing the overcoat layer and the patterned layer to alter the first critical dimension of the patterned layer to a second critical dimension.

    CRITICAL DIMENSION CONTROL BY USE OF A PHOTO AGENT
    10.
    发明申请
    CRITICAL DIMENSION CONTROL BY USE OF A PHOTO AGENT 审中-公开

    公开(公告)号：US20170330806A1

    公开(公告)日：2017-11-16

    申请号：US15594187

    申请日：2017-05-12

    Applicant: Tokyo Electron Limited

    Inventor： Anton J. deVilliers ,  Michael A. Carcasi

    IPC: H01L21/66 ,  H01L21/311 ,  H01L21/027

    CPC classification number: H01L22/20 ,  G03F7/0035 ,  G03F7/2051 ,  G03F7/2053 ,  G03F7/405 ,  G03F7/70466 ,  G03F7/70558 ,  H01L21/0274 ,  H01L21/31144

    Abstract: A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation-sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer over the patterned layer, the overcoat layer containing a photo agent selected from a photosensitizer generator compound, a photosensitizer compound, a photoacid generator compound, a photoactive agent, an acid-containing compound, or a combination of two or more thereof. The overcoat layer is then exposed to electromagnetic radiation, wherein the dose of electromagnetic radiation applied to different regions of the substrate is varied, and then the overcoat layer and patterned layer are heated. The method further includes developing the overcoat layer and the patterned layer to alter the first critical dimension of the patterned layer to a second critical dimension.

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