Invention Grant
- Patent Title: Memory systems
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Application No.: US14908340Application Date: 2013-08-13
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Publication No.: US09747993B2Publication Date: 2017-08-29
- Inventor: Hyoung-Gon Lee
- Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Applicant Address: US DE Wilmington
- Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee Address: US DE Wilmington
- Agency: Brundidge & Stanger, P.C.
- International Application: PCT/US2013/054672 WO 20130813
- International Announcement: WO2015/023259 WO 20150219
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/16 ; G11C16/34 ; G11C29/02 ; G11C29/42 ; G11C29/44 ; G11C29/50 ; G06F3/06 ; G11C16/14

Abstract:
Technologies are generally described for a memory system that may be a solid-state drive (SDD). The memory system may include memory blocks, where each memory block may have multiple memory pages, and each memory page may have multiple memory cells. The memory cells may have multiple programmed states. In various examples, a method to control the memory system may include determining one or more memory pages to be analyzed, identifying read threshold voltages of each memory cell associated with the memory pages to be analyzed, performing statistical analysis on the identified read threshold voltages, and determining a distribution of the read threshold voltages based at least in part on the statistical analysis.
Public/Granted literature
- US20160211033A1 MEMORY SYSTEMS Public/Granted day:2016-07-21
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