Invention Grant
- Patent Title: Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof
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Application No.: US15059779Application Date: 2016-03-03
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Publication No.: US09748411B2Publication Date: 2017-08-29
- Inventor: Mario Giuseppe Saggio , Simone Rascuna′
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT102015000046878 20150827
- Main IPC: H01L31/0312
- IPC: H01L31/0312 ; H01L21/8238 ; H01L29/872 ; H01L29/417 ; H01L29/66 ; H01L29/06 ; H01L29/16 ; H01L21/225 ; H01L21/768 ; H01L23/535 ; H01L29/20
Abstract:
A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.
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Information query
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