- Patent Title: Redistribution layer contacting first wafer through second wafer
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Application No.: US14326304Application Date: 2014-07-08
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Publication No.: US09754860B2Publication Date: 2017-09-05
- Inventor: Stuart B. Molin , Michael A. Stuber , Mark Drucker
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/20 ; H01L21/84 ; H01L29/78 ; H01L27/12 ; H01L21/322 ; H01L21/768 ; H01L21/762

Abstract:
A semiconductor structure is formed with first and second semiconductor wafers and a redistribution layer. The first semiconductor wafer is formed with a first active layer and a first interconnect layer. The second semiconductor wafer is formed with a second active layer and a second interconnect layer. The second semiconductor wafer is inverted and bonded to the first semiconductor wafer, and a substrate is removed from the second semiconductor wafer. The redistribution layer redistributes electrical connective pad locations on a side of the second semiconductor wafer. The redistribution layer also electrically contacts the first interconnect layer through a hole in the second active layer and the second interconnect layer.
Public/Granted literature
- US20140319698A1 Redistribution Layer Contacting First Wafer through Second Wafer Public/Granted day:2014-10-30
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