公开(公告)号：US09754860B2

公开(公告)日：2017-09-05

申请号：US14326304

申请日：2014-07-08

Applicant: QUALCOMM Incorporated

Inventor： Stuart B. Molin ,  Michael A. Stuber ,  Mark Drucker

IPC: H01L23/48 ,  H01L21/20 ,  H01L21/84 ,  H01L29/78 ,  H01L27/12 ,  H01L21/322 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L23/481 ,  H01L21/2007 ,  H01L21/3221 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2224/13

Abstract: A semiconductor structure is formed with first and second semiconductor wafers and a redistribution layer. The first semiconductor wafer is formed with a first active layer and a first interconnect layer. The second semiconductor wafer is formed with a second active layer and a second interconnect layer. The second semiconductor wafer is inverted and bonded to the first semiconductor wafer, and a substrate is removed from the second semiconductor wafer. The redistribution layer redistributes electrical connective pad locations on a side of the second semiconductor wafer. The redistribution layer also electrically contacts the first interconnect layer through a hole in the second active layer and the second interconnect layer.