Invention Grant
- Patent Title: Peeling method and method of manufacturing semiconductor device
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Application No.: US15059623Application Date: 2016-03-03
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Publication No.: US09755148B2Publication Date: 2017-09-05
- Inventor: Toru Takayama , Junya Maruyama , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-251870 20010822
- Main IPC: H01L51/00
- IPC: H01L51/00 ; B32B7/06 ; B32B43/00 ; H01L21/762 ; H01L27/12 ; H01L29/66 ; H01L29/786 ; G02F1/1368 ; H01L51/56 ; G02F1/136 ; H01L21/322 ; H01L27/32 ; H01L51/52

Abstract:
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
Public/Granted literature
- US20160190219A1 Peeling Method and Method of Manufacturing Semiconductor Device Public/Granted day:2016-06-30
Information query
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