Invention Grant
- Patent Title: Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
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Application No.: US14821997Application Date: 2015-08-10
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Publication No.: US09758365B2Publication Date: 2017-09-12
- Inventor: David L. Harame , Anthony K. Stamper
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY George Town
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY George Town
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81B3/00 ; H01L21/84 ; H01L27/12 ; H03H3/02 ; H03H9/10 ; H03H9/17 ; H01L41/113 ; H03H1/00 ; H03H9/24 ; H03H9/15

Abstract:
Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
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