Invention Grant
- Patent Title: Reconfigurable sense amplifier for a memory device
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Application No.: US15141084Application Date: 2016-04-28
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Publication No.: US09761316B2Publication Date: 2017-09-12
- Inventor: François Tailliet , Victorien Brecte
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1561649 20151201
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/08
Abstract:
A memory sense amplifier is configurable on command between a current-sensing mode and a voltage-sensing mode. The sense amplifier is intended, in its current-sensing configuration, to read a datum stored in a memory cell connected to the amplifier, and is intended, in its voltage-sensing configuration, to read a datum stored in a bit-line latch connected to the amplifier.
Public/Granted literature
- US20170154683A1 Reconfigurable Sense Amplifier for a Memory Device Public/Granted day:2017-06-01
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