A method for forming the semiconductor device structure is provided. The method includes forming a metal layer in a first dielectric layer over a substrate and forming an etch stop layer over the metal layer. The etch stop layer is made of metal-containing material. The method also includes forming a second dielectric layer over the etch stop layer and removing a portion of the second dielectric layer to expose the etch stop layer and to form a via by an etching process. The method further includes performing a plasma cleaning process on the via and the second dielectric layer, and the plasma cleaning process is performed by using a plasma including nitrogen gas (N2) and hydrogen gas (H2).