Invention Grant
- Patent Title: Hybrid interconnect structure and electronic device employing the same
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Application No.: US15083827Application Date: 2016-03-29
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Publication No.: US09761532B2Publication Date: 2017-09-12
- Inventor: Keunwook Shin , Hyeonjin Shin , Changhyun Kim , Changseok Lee , Seongjun Park , Hyunjae Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0137086 20150925
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/532 ; H01L23/528
Abstract:
A hybrid interconnect structure includes a graphene layer between a non-metallic material layer and a metal layer, and a first interfacial bonding layer between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. The graphene layer connects the non-metallic material layer and the metal layer, and the first bonding layer includes a metallic material.
Public/Granted literature
- US20170092592A1 HYBRID INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE EMPLOYING THE SAME Public/Granted day:2017-03-30
Information query
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