Invention Grant
- Patent Title: Hardmask for a halo/extension implant of a static random access memory (SRAM) layout
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Application No.: US14043871Application Date: 2013-10-02
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Publication No.: US09761594B2Publication Date: 2017-09-12
- Inventor: Xusheng Wu , Bingwu Liu , Randy Mann
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/265 ; H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L27/02 ; H01L21/266 ; H01L29/78

Abstract:
Approaches for providing a hardmask used during a halo/extension implant of a static random access memory (SRAM) layout for a semiconductor device are disclosed. Specifically, approaches are provided for forming a pull-down (PD) transistor over a substrate; forming a pass-gate (PG) transistor over the substrate; and patterning a hardmask over the device, the hardmask including a first section adjacent the PD transistor and a second section adjacent the PG transistor, wherein a distance between the first section and the PD transistor is shorter than a distance between the second section and the PG transistor. The respective distances between the first section and the PD transistor, and the second section and the PG transistor, are selected to prevent a halo/extension implant from impacting one side of the PD transistor, while allowing the halo/extension implant to impact both sides of the PG transistor.
Public/Granted literature
- US20150091097A1 HARDMASK FOR A HALO/EXTENSION IMPLANT OF A STATIC RANDOM ACCESS MEMORY (SRAM) LAYOUT Public/Granted day:2015-04-02
Information query
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