Invention Grant
- Patent Title: Method for transferring a layer from a single-crystal substrate
-
Application No.: US15159646Application Date: 2016-05-19
-
Publication No.: US09768057B2Publication Date: 2017-09-19
- Inventor: Ludovic Ecarnot , Nicolas Daval , Nadia Ben Mohamed , Francois Boedt , Carole David , Isabelle Guerin
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1554818 20150528
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/762 ; H01L21/02 ; B28D5/00

Abstract:
A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.
Public/Granted literature
- US20160351438A1 METHOD FOR TRANSFERRING A LAYER FROM A SINGLE-CRYSTAL SUBSTRATE Public/Granted day:2016-12-01
Information query
IPC分类: