公开(公告)号：US20150050797A1

公开(公告)日：2015-02-19

申请号：US14386937

申请日：2013-03-14

申请人： Soitec

发明人： Nadia Ben Mohamed ,  Carole David ,  Camille Rigal

IPC分类号： H01L21/762 ,  H01L21/265

CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76251 ,  H01L21/76259

摘要： The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.

摘要翻译： 本发明涉及一种用于将原子或离子物质注入由半导体材料制成的一批衬底中的方法，其中：由半导体材料制成的每个衬底位于批量注入机的相应支撑件上，每个衬底包括薄层 表面电绝缘子; 并且在衬底的整个表面上通过它们的绝缘体层注入至少一种离子或原子物质的剂量，以在每个衬底内形成脆性区域，并在其之间形成薄层半导体材料 绝缘体层和基板的脆性区域，该注入方法的特征在于，在该方法期间，其上定位有基板的每个支撑件具有至少两个相对于垂直于植入方向的平面的独立倾斜 物种以提高物质在基质中的植入深度。 本公开还涉及通过实施注入方法获得的绝缘体上半导体类型的结构。

公开(公告)号：US08691662B2

公开(公告)日：2014-04-08

申请号：US13827618

申请日：2013-03-14

申请人： Soitec

发明人： Carole David ,  Sébastien Kerdiles

IPC分类号： H01L21/46

CPC分类号： H01L21/02 ,  H01L21/76254

摘要： A method for fabricating a silicon-on-insulator structure includes forming a first oxide layer on a silicon donor substrate, forming a second oxide layer on a supporting substrate, and forming a weakened zone in the donor substrate. The donor substrate is bonded to the supporting substrate by establishing direct contact between the first oxide layer on the silicon donor substrate and the second oxide layer on the supporting substrate and establishing a direct oxide-to-oxide bond therebetween. The donor substrate is split along the weakened zone to form a silicon-on-insulator structure, and the silicon-on-insulator structure is subjected to two successive rapid thermal annealing processes at temperatures T1 and T2, respectively, wherein T1 is less than or equal to T2, T1 is between 1200° C. and 1300° C., T2 is between 1240° C. and 1300° C., and when T1 is below 1240° C., then T2 is above 1240° C.

摘要翻译： 一种用于制造绝缘体上硅结构的方法包括在硅供体衬底上形成第一氧化物层，在支撑衬底上形成第二氧化物层，并在供体衬底中形成弱化区。 施主衬底通过在硅供体衬底上的第一氧化物层和支撑衬底上的第二氧化物层之间建立直接接触并在其间建立直接的氧化物 - 氧化物键而与支撑衬底结合。 施主衬底沿着弱化区分裂以形成绝缘体上硅结构，并且绝缘体上硅结构分别在温度T1和T2进行两次连续的快速热退火处理，其中T1小于或等于 等于T2，T1在1200℃和1300℃之间，T2在1240℃和1300℃之间，当T1低于1240℃时，则T2高于1240℃。

公开(公告)号：US09768057B2

公开(公告)日：2017-09-19

申请号：US15159646

申请日：2016-05-19

申请人： Soitec

发明人： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabelle Guerin

IPC分类号： H01L21/66 ,  H01L21/762 ,  H01L21/02 ,  B28D5/00

CPC分类号： H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

摘要： A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

公开(公告)号：US09230848B2

公开(公告)日：2016-01-05

申请号：US13629093

申请日：2012-09-27

申请人： Soitec

发明人： Carole David ,  Sébastien Kerdiles

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L29/06 ,  H01L21/3105

CPC分类号： H01L21/76254 ,  H01L21/3105 ,  H01L21/7624 ,  H01L21/76251 ,  H01L29/06

摘要： Embodiments of the invention relate to a process for fabricating a silicon-on-insulator structure comprising the following steps: providing a donor substrate and a support substrate, only one of the substrates being covered with an oxide layer; forming, in the donor substrate, a weak zone; plasma activating the oxide layer; bonding the donor substrate to the support substrate in a partial vacuum; implementing a bond-strengthening anneal at a temperature of 350° C. or less causing the donor substrate to cleave along the weak zone; and carrying out a heat treatment at a temperature above 900° C. A transition from the temperature of the bond-strengthening anneal to the temperature of the heat treatment may be achieved at a ramp rate above 10° C./s.

摘要翻译： 本发明的实施例涉及一种用于制造绝缘体上硅结构的方法，包括以下步骤：提供施主衬底和支撑衬底，只有一个衬底被氧化物层覆盖; 在施主衬底中形成弱区; 等离子体激活氧化层; 在部分真空中将施主衬底结合到支撑衬底; 在350℃或更低的温度下进行结合强化退火，导致供体基体沿弱区裂开; 并在高于900℃的温度下进行热处理。从加强退火的温度到热处理的温度的转变可以以高于10℃/秒的斜率进行。

公开(公告)号：US20170207101A1

公开(公告)日：2017-07-20

申请号：US15403505

申请日：2017-01-11

申请人： Soitec

发明人： Didier Landru ,  Oleg Kononchuk ,  Carole David

IPC分类号： H01L21/3105 ,  H01L21/762

CPC分类号： H01L21/31051 ,  H01L21/302 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76254

摘要： A process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment includes performing a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate, and performing a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

公开(公告)号：US09659777B2

公开(公告)日：2017-05-23

申请号：US14362208

申请日：2012-12-13

申请人： Soitec

发明人： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC分类号： H01L21/428 ,  H01L21/268 ,  H01L21/02 ,  H01L21/20 ,  H01L21/324

CPC分类号： H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

摘要： The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

公开(公告)号：US09425081B2

公开(公告)日：2016-08-23

申请号：US14386937

申请日：2013-03-14

申请人： Soitec

发明人： Nadia Ben Mohamed ,  Carole David ,  Camille Rigal

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/18 ,  H01L21/265

CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76251 ,  H01L21/76259

摘要： The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.

摘要翻译： 本发明涉及一种用于将原子或离子物质注入由半导体材料制成的一批衬底中的方法，其中：由半导体材料制成的每个衬底位于批量注入机的相应支撑件上，每个衬底包括薄层 表面电绝缘子; 并且在衬底的整个表面上通过它们的绝缘体层注入至少一种离子或原子物质的剂量，以在每个衬底内形成脆性区域，并在其之间形成薄层半导体材料 绝缘体层和基板的脆性区域，该注入方法的特征在于，在该方法期间，其上定位有基板的每个支撑件具有至少两个相对于垂直于植入方向的平面的独立倾斜度 物种以提高物质在基质中的植入深度。 本公开还涉及通过实施注入方法获得的绝缘体上半导体类型的结构。

公开(公告)号：US10134602B2

公开(公告)日：2018-11-20

申请号：US15403505

申请日：2017-01-11

申请人： Soitec

发明人： Didier Landru ,  Oleg Kononchuk ,  Carole David

IPC分类号： H01L21/00 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/324

摘要： A process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment includes performing a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate, and performing a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

公开(公告)号：US09875914B2

公开(公告)日：2018-01-23

申请号：US14898937

申请日：2014-06-11

申请人： Soitec

发明人： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC分类号： H01L21/00 ,  H01L21/67 ,  H01L21/762 ,  H01L21/673 ,  H01L21/02 ,  H01L21/225 ,  H01L21/687

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

摘要： A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

公开(公告)号：US20160372342A1

公开(公告)日：2016-12-22

申请号：US14898937

申请日：2014-06-11

申请人： SOITEC

发明人： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC分类号： H01L21/67 ,  H01L21/762 ,  H01L21/02 ,  H01L21/687 ,  H01L21/225

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

摘要： A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

摘要翻译： 一种方法包括以下步骤：a）设置适于接收多个结构的室，b）将气流循环到室中，使得室具有非氧化气氛，c）多个 高于该阈值的结构，电介质的氧化物中存在的氧扩散通过有源层与活性层的半导体材料反应并产生挥发性材料，该过程值得注意的是步骤b）是 使得气流在多个结构之间的循环速率大于挥发性物质扩散到气流中的速率。