Invention Grant
- Patent Title: Trigate transistor structure with unrecessed field insulator and thinner electrodes over the field insulator
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Application No.: US14778063Application Date: 2013-06-26
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Publication No.: US09768249B2Publication Date: 2017-09-19
- Inventor: Michael L. Hattendorf , Pragyansri Pathi , Michael K. Harper
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal, LLP
- International Application: PCT/US2013/047871 WO 20130626
- International Announcement: WO2014/209297 WO 20141231
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L27/11 ; H01L29/423 ; H01L29/66
Abstract:
Techniques related to integrated circuits having MOSFETs with an unrecessed field insulator and thinner electrodes over the field insulator of ICs, systems incorporating such integrated circuits, and methods for forming them are discussed.
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