Invention Grant
- Patent Title: Plasma ion source and charged particle beam apparatus
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Application No.: US15019987Application Date: 2016-02-10
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Publication No.: US09773637B2Publication Date: 2017-09-26
- Inventor: Hiroshi Oba , Yasuhiko Sugiyama , Mamoru Okabe
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Brinks Gilson & Lione
- Priority: JP2015-026842 20150213
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H05H1/30 ; H05H1/46

Abstract:
A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.
Public/Granted literature
- US20160240346A1 PLASMA ION SOURCE AND CHARGED PARTICLE BEAM APPARATUS Public/Granted day:2016-08-18
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