Invention Grant
- Patent Title: Composition for manufacturing semiconductor device and method of manufacturing semiconductor device using the composition
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Application No.: US15148622Application Date: 2016-05-06
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Publication No.: US09773673B2Publication Date: 2017-09-26
- Inventor: Jin Park , Hyun-woo Kim , Myeong-koo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0118877 20150824
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L21/033 ; G03F7/11 ; C09D179/08 ; H01L21/027

Abstract:
A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.
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