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1.发明授权公开(公告)号：US10134606B2
公开(公告)日：2018-11-20
申请号：US14712920
申请日：2015-05-15
发明人： Sang-yoon Woo , Hyun-woo Kim , Ju-hyung An , Jin-young Yoon
IPC分类号： H01L21/027 , H01L21/3213 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/34 , G03F7/039 , G03F7/09 , H01L21/033 , H01L21/308 , H01L21/311 , H01L27/108
摘要： A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.
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公开(公告)号：US20160049306A1
公开(公告)日：2016-02-18
申请号：US14692330
申请日：2015-04-21
发明人： Cha-won Koh , Hyun-woo Kim , Jong-soo Kim , Jin Park , Hyung-rae Lee
IPC分类号： H01L21/306 , H01L21/027 , H01L21/02 , H01L21/308
CPC分类号： H01L21/30604 , H01L21/02118 , H01L21/02343 , H01L21/02345 , H01L21/0273 , H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.
摘要翻译： 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。
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公开(公告)号：US20190232227A1
公开(公告)日：2019-08-01
申请号：US16122454
申请日：2018-09-05
发明人： Cha-won Koh , Oleg Feygenson , Jung-hyeon Kim , Hyun-woo Kim , Eun-sung Kim
摘要： A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.
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4.发明授权公开(公告)号：US09804493B2
公开(公告)日：2017-10-31
申请号：US14549911
申请日：2014-11-21
发明人： Hyun-woo Kim , Cheol hong Park , Tetsuo Okayasu , Xiaowei Wang , Georg Pawlowski , Yusuke Hama
摘要： Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.
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公开(公告)号：US09773672B2
公开(公告)日：2017-09-26
申请号：US15016309
申请日：2016-02-05
发明人： Su-min Kim , Hyun-woo Kim , Hyo-jin Yun , Kyoung-seon Kim , Hai-sub Na , Su-min Park , So-ra Han
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , H01L21/3105 , H01L21/3213 , H01L21/28 , H01L21/02
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/325 , G03F7/38 , G03F7/40 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/0273 , H01L21/0337 , H01L21/28273 , H01L21/31058 , H01L21/31144 , H01L21/32139
摘要： A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.
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公开(公告)号：US09261532B1
公开(公告)日：2016-02-16
申请号：US14694115
申请日：2015-04-23
发明人： Hyun-woo Kim , Woo-seok Ko , Young-hwan Kim , Jeong-hoi Kim , Baek-man Sung , Hyung-su Son , Chae-ho Shin , Yu-sin Yang , Jae-youn Wi , Sang-kil Lee , Chung-sam Jun
IPC分类号： G01Q60/40
摘要： A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.
摘要翻译： 一种导电原子力显微镜，包括多个探针结构，每个探针结构包括探针和连接到其上的悬臂，施加偏置电压的电源，检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动，并且基于第一和第二电流分别计算样本和测量对象的代表性电流，以及控制器，计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子，并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。
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7.发明授权公开(公告)号：US11003081B2
公开(公告)日：2021-05-11
申请号：US16156264
申请日：2018-10-10
发明人： Jin Park , Hyun-woo Kim
IPC分类号： G03F7/36 , G03F7/038 , C08F214/14 , G03F7/16 , G03F7/20 , G03F7/34 , C08G75/26 , G03F7/039 , C08F214/18 , C08F214/16
摘要： A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.
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公开(公告)号：US09773673B2
公开(公告)日：2017-09-26
申请号：US15148622
申请日：2016-05-06
发明人： Jin Park , Hyun-woo Kim , Myeong-koo Kim
IPC分类号： H01L51/00 , H01L21/033 , G03F7/11 , C09D179/08 , H01L21/027
CPC分类号： H01L21/0337 , C08G73/08 , C08G73/1042 , C08G73/1067 , C09D179/08 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0276 , H01L21/0332
摘要： A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.
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9.发明授权公开(公告)号：US09766544B2
公开(公告)日：2017-09-19
申请号：US14549911
申请日：2014-11-21
发明人： Hyun-woo Kim , Cheol hong Park , Tetsuo Okayasu , Xiaowei Wang , Georg Pawlowski , Yusuke Hama
摘要： Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.
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公开(公告)号：US09412604B2
公开(公告)日：2016-08-09
申请号：US14692330
申请日：2015-04-21
发明人： Cha-won Koh , Hyun-woo Kim , Jong-soo Kim , Jin Park , Hyung-rae Lee
IPC分类号： H01L21/30 , H01L21/306 , H01L21/308 , H01L21/027 , H01L21/02
CPC分类号： H01L21/30604 , H01L21/02118 , H01L21/02343 , H01L21/02345 , H01L21/0273 , H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.
摘要翻译： 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。
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