Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US14954967Application Date: 2015-11-30
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Publication No.: US09773910B2Publication Date: 2017-09-26
- Inventor: Chung-Yi Chiu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW104136243A 20151104
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/321 ; H01L29/66 ; H01L29/165 ; H01L29/06
Abstract:
A semiconductor structure includes a semiconductor substrate, at least a semiconductor layer formed on the semiconductor substrate, and at least a fin structure formed on the semiconductor layer. The semiconductor substrate includes a first semiconductor material, the semiconductor layer includes the first semiconductor material and a second semiconductor material, and the fin structure includes at least the first semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The semiconductor layer includes a first width, the fin structure includes a second width, and the second width is smaller than the first width.
Public/Granted literature
- US20170125595A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-05-04
Information query
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