- 专利标题： Thin film transistor and manufacturing method thereof, display substrate and display device
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申请号： US14651376申请日： 2014-10-30
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公开(公告)号： US09773917B2公开(公告)日： 2017-09-26
- 发明人: Jiangbo Chen , Dongfang Wang
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE Technology Group Co., Ltd.
- 当前专利权人： BOE Technology Group Co., Ltd.
- 当前专利权人地址： CN Beijing
- 代理机构： Collard & Roe, P.C.
- 优先权： CN201410190720 20140507
- 国际申请： PCT/CN2014/089900 WO 20141030
- 国际公布： WO2015/169069 WO 20151112
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/16 ; H01L29/786 ; C23C14/08 ; C23C14/14 ; C23C14/28 ; C23C14/34 ; C23C16/34 ; C23C16/40 ; H01L21/02 ; H01L27/12 ; H01L29/04 ; H01L29/24 ; H01L29/66
摘要：
A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.
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