Invention Grant
- Patent Title: Pulsed control line biasing in memory
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Application No.: US15371462Application Date: 2016-12-07
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Publication No.: US09779832B1Publication Date: 2017-10-03
- Inventor: Muhammad Masuduzzaman , Deepanshu Dutta , Jong Yuh
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C16/34 ; G11C16/04 ; G11C16/10 ; G11C16/26 ; G11C16/16 ; G11C16/08 ; G11C7/22

Abstract:
In one aspect, a voltage is provided as a rectangular waveform in which the duty cycle is varied to provide different effective voltages. These voltages may be applied to various control lines in a memory device such as a word line, bit line and/or source line, in a program, verify, read or erase operation. In some cases, the duty cycle is a function of programming data of a memory cell such as an assigned data state or a programming speed category. The duty cycle could also be a function of a programming phase or other criterion. The duty cycle can be varied by modifying the duration and separation of the pulses of the waveform or by pulse counting, in which a specified number of pulses are passed in a time period.
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