Invention Grant
- Patent Title: Method for manufacturing metal interconnects
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Application No.: US15168095Application Date: 2016-05-30
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Publication No.: US09779989B1Publication Date: 2017-10-03
- Inventor: Po-Cheng Huang , Chun-Liang Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768

Abstract:
A method for manufacturing metal interconnects. The method includes following steps. A substrate including a dielectric layer formed thereon is provided, and a plurality of trenches are formed in the dielectric layer. Next, a seed layer is formed in the trenches and on the dielectric layer and followed by masking regions of the seed layer to define a plurality of masked regions and a plurality of exposed regions for the seed layer. Subsequently, a surface treatment is performed to the exposed regions of the seed layer to form a plurality of rough surfaces on the exposed regions of the seed layer. Then, a metal layer is formed on the substrate, and the trenches are filled up with the metal layer.
Information query
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