Invention Grant
- Patent Title: Mechanisms for forming image-sensor device with epitaxial isolation feature
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Application No.: US14089263Application Date: 2013-11-25
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Publication No.: US09780137B2Publication Date: 2017-10-03
- Inventor: Wen-I Hsu , Feng-Chi Hung , Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146

Abstract:
Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through the back surface. The radiation-sensing region further includes an epitaxial isolation feature formed in the substrate and adjacent to the radiation-sensing region. The radiation-sensing region and the epitaxial isolation feature have different doping polarities.
Public/Granted literature
- US20150145096A1 MECHANISMS FOR FORMING IMAGE-SENSOR DEVICE WITH EPITAXIAL ISOLATION FEATURE Public/Granted day:2015-05-28
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