Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
-
Application No.: US15011683Application Date: 2016-02-01
-
Publication No.: US09780165B2Publication Date: 2017-10-03
- Inventor: Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105100231A 20160106
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L21/762 ; H01L21/311 ; H01L21/306 ; H01L21/02 ; H01L27/088
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a plurality of fin-shaped structures thereon; forming a first shallow trench isolation (STI) between the fin-shaped structures and a second STI around the fin-shaped structures; removing part of the fin-shaped structures; and removing part of the first STI so that the top surfaces of the fin-shaped structures are higher than the top surface of the first STI and lower than the top surface of the second STI.
Public/Granted literature
- US20170194422A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-07-06
Information query
IPC分类:
