Invention Grant
- Patent Title: Electronic device with asymmetric gate strain
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Application No.: US15165951Application Date: 2016-05-26
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Publication No.: US09780184B2Publication Date: 2017-10-03
- Inventor: Gurtej S. Sandhu , Kunal R. Parekh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/49 ; H01L29/10 ; H01L21/8234 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/40 ; H01L21/8238
Abstract:
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.
Public/Granted literature
- US20160268428A1 ELECTRONIC DEVICE WITH ASYMMETRIC GATE STRAIN Public/Granted day:2016-09-15
Information query
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