- 专利标题： Light emitting diode and method for manufacturing the same
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申请号： US14823129申请日： 2015-08-11
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公开(公告)号： US09786818B2公开(公告)日： 2017-10-10
- 发明人: Ching-Hsueh Chiu , Chia-Hung Huang , Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang
- 申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 申请人地址： TW Hsinchu Hsien
- 专利权人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址： TW Hsinchu Hsien
- 代理商 Steven Reiss
- 优先权： CN201410441937 20140902
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L33/40 ; H01L33/38 ; H01L33/00 ; H01L33/32 ; H01L33/44
摘要：
A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.
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