Invention Grant
- Patent Title: Bad column management in nonvolatile memory
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Application No.: US14919363Application Date: 2015-10-21
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Publication No.: US09792175B2Publication Date: 2017-10-17
- Inventor: Sahil Sharma , Abhijeet Manohar , Mrinal Kochar , Yong Huang , Derek McAuley , Mikhail Palityka , Ivan Baran , Aaron Lee
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Foley & Lardner LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/52
Abstract:
When the number of bad columns in a memory or plane is less than a threshold number then a first Error Correction Code (ECC) scheme encodes user data in first pages of a first size. If the number of bad columns is greater than the threshold number then a second ECC scheme encodes the user data in second pages of a second size that is smaller than the first size.
Public/Granted literature
- US20170116076A1 Bad Column Management in Nonvolatile Memory Public/Granted day:2017-04-27
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