Invention Grant
- Patent Title: Semiconductor structure having insulator pillars and semiconductor material on substrate
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Application No.: US15075668Application Date: 2016-03-21
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Publication No.: US09793113B2Publication Date: 2017-10-17
- Inventor: Alexander Reznicek , Dominic J. Schepis , Kangguo Cheng , Bruce B. Doris , Pouya Hashemi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/78 ; H01L21/02 ; H01L21/31 ; H01L21/311 ; H01L29/06 ; H01L29/66 ; H01L27/092 ; H01L29/10 ; H01L29/165 ; H01L21/762 ; H01L21/8234
Abstract:
One aspect of the disclosure relates to a method of forming a semiconductor structure. The method may include: forming a set of openings within a substrate; forming an insulator layer within each opening in the set of openings; recessing the substrate between adjacent openings containing the insulator layer in the set of openings to form a set of insulator pillars on the substrate; forming sigma cavities within the recessed substrate between adjacent insulator pillars in the set of insulator pillars; and filling the sigma cavities with a semiconductor material over the recessed substrate between adjacent insulator pillars.
Public/Granted literature
- US20170271146A1 SEMICONDUCTOR STRUCTURE HAVING INSULATOR PILLARS AND SEMICONDUCTOR MATERIAL ON SUBSTRATE Public/Granted day:2017-09-21
Information query
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