Invention Grant
- Patent Title: Method of forming a high electron mobility transistor
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Application No.: US15238083Application Date: 2016-08-16
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Publication No.: US09793371B2Publication Date: 2017-10-17
- Inventor: Chun-Wei Hsu , Po-Chih Chen , King-Yuen Wong , Jiun-Lei Jerry Yu , Fu-Wei Yao , Chen-Ju Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/66 ; H01L29/267 ; H01L29/43 ; H01L29/778 ; H01L29/20 ; H01L29/06 ; H01L29/205 ; H01L29/417 ; H01L29/10
Abstract:
A method of forming a high electron mobility transistor (HEMT) includes forming a second III-V compound layer on a first III-V compound layer, forming a source feature and a drain feature on the second III-v compound layer, depositing a p-type layer on a portion of the second III-V compound layer between the source feature and the drain feature, and forming a gate electrode on the p-type layer. A carrier channel is located between the first III-V compound layer and the second III-V compound layer.
Public/Granted literature
- US20160359015A1 METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR Public/Granted day:2016-12-08
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