Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing the same
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Application No.: US14415752Application Date: 2013-08-06
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Publication No.: US09793376B2Publication Date: 2017-10-17
- Inventor: Shinichiro Miyahara , Toshimasa Yamamoto , Jun Morimoto , Narumasa Soejima , Yukihiko Watanabe
- Applicant: DENSO CORPORATION , Jun Morimoto
- Applicant Address: JP Kariya JP Toyota-shi
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Kariya JP Toyota-shi
- Agency: Posz Law Group, PLC
- Priority: JP2012-174948 20120807; JP2013-156393 20130729
- International Application: PCT/JP2013/004735 WO 20130806
- International Announcement: WO2014/024469 WO 20140213
- Main IPC: H01L31/0312
- IPC: H01L31/0312 ; H01L29/66 ; H01L29/16 ; H01L29/78 ; H01L29/423 ; H01L21/306 ; H01L21/04 ; H01L21/28 ; H01L29/04 ; H01L29/10
Abstract:
In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.
Public/Granted literature
- US20150236127A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-08-20
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