Invention Grant
- Patent Title: Method for reducing size and center positioning of magnetic memory element contacts
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Application No.: US13996530Application Date: 2011-12-20
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Publication No.: US09793467B2Publication Date: 2017-10-17
- Inventor: Brian S. Doyle , Yong Ju Lee , Charles C. Kuo , David L. Kencke , Kaan Oguz , Roksana Golizadeh Mojard , Uday Shah
- Applicant: Brian S. Doyle , Yong Ju Lee , Charles C. Kuo , David L. Kencke , Kaan Oguz , Roksana Golizadeh Mojard , Uday Shah
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2011/066015 WO 20111220
- International Announcement: WO2013/095357 WO 20130627
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/12 ; H01L27/22
Abstract:
A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper surface and into the opening.
Public/Granted literature
- US20140167191A1 METHOD FOR REDUCING SIZE AND CENTER POSITIONING OF MAGNETIC MEMORY ELEMENT CONTACTS Public/Granted day:2014-06-19
Information query
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