A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching (i) the first encapsulation layer which is disposed over the exposed surface of the dielectric layer and (ii) re-deposited material disposed on the dielectric layer, wherein, thereafter a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region. The method further includes depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer; and etching the remaining layers of the stack/structure (via one or more etch processes).