- 专利标题: Parasitic channel mitigation via back side implantation
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申请号: US14847240申请日: 2015-09-08
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公开(公告)号: US09799520B2公开(公告)日: 2017-10-24
- 发明人: John Claassen Roberts
- 申请人: MACOM Technology Solutions Holdings, Inc.
- 申请人地址: US MA Lowell
- 专利权人: MACOM Technology Solutions Holdings, Inc.
- 当前专利权人: MACOM Technology Solutions Holdings, Inc.
- 当前专利权人地址: US MA Lowell
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/265 ; H01L29/06 ; H01L29/20 ; H01L29/205 ; H01L29/66 ; H01L21/266 ; H01L29/32 ; H01L29/417 ; H01L21/02
摘要:
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
公开/授权文献
- US20170069743A1 PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION 公开/授权日:2017-03-09
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