公开(公告)号：US10211294B2

公开(公告)日：2019-02-19

申请号：US14847225

申请日：2015-09-08

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： John Claassen Roberts ,  James W. Cook, Jr.

IPC分类号： H01L23/58 ,  H01L29/20 ,  H01L21/265 ,  H01L21/266 ,  H01L29/32 ,  H01L29/778 ,  H01L29/417 ,  H01L29/06 ,  H01L21/02

摘要： III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

公开(公告)号：US20180122928A1

公开(公告)日：2018-05-03

申请号：US15713774

申请日：2017-09-25

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： John Claassen Roberts ,  Kevin J. Linthicum ,  Allen W. Hanson

IPC分类号： H01L29/778 ,  H01L29/32 ,  H01L29/06 ,  H01L29/20 ,  H01L29/417

CPC分类号： H01L29/7783 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/41758

摘要： III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

公开(公告)号：US20180308927A1

公开(公告)日：2018-10-25

申请号：US15957042

申请日：2018-04-19

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Allen W. Hanson ,  Wayne Mack Struble ,  John Claassen Roberts

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/20 ,  H01L21/761 ,  H01L21/8252 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L29/0646 ,  H01L21/56 ,  H01L21/761 ,  H01L21/8252 ,  H01L23/3171 ,  H01L27/0605 ,  H01L29/2003 ,  H01L33/0095

摘要： Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of a wafer. A passivation layer may be deposited over the implantation region and extend further into the streets than the isolation region to protect the isolation region from environmental conditions that may adversely affect the isolation region.

公开(公告)号：US20180158685A1

公开(公告)日：2018-06-07

申请号：US15791077

申请日：2017-10-23

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： John Claassen Roberts

IPC分类号： H01L21/265 ,  H01L21/266 ,  H01L29/32 ,  H01L29/778

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/266 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/41758 ,  H01L29/7783

摘要： III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

公开(公告)号：US20180026098A1

公开(公告)日：2018-01-25

申请号：US15613480

申请日：2017-06-05

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Kevin J. Linthicum ,  John Claassen Roberts

IPC分类号： H01L29/10 ,  H01L21/02 ,  H01L29/32 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/26506 ,  H01L21/266 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/32 ,  H01L29/41758 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787

摘要： III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

公开(公告)号：US09799520B2

公开(公告)日：2017-10-24

申请号：US14847240

申请日：2015-09-08

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： John Claassen Roberts

IPC分类号： H01L29/778 ,  H01L21/265 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L21/266 ,  H01L29/32 ,  H01L29/417 ,  H01L21/02

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/266 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/41758 ,  H01L29/7783

摘要： III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

公开(公告)号：US11018220B2

公开(公告)日：2021-05-25

申请号：US15957042

申请日：2018-04-19

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Allen W. Hanson ,  Wayne Mack Struble ,  John Claassen Roberts

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/20 ,  H01L23/31 ,  H01L21/56 ,  H01L21/761 ,  H01L33/00 ,  H01L21/8252

摘要： Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of a wafer. A passivation layer may be deposited over the implantation region and extend further into the streets than the isolation region to protect the isolation region from environmental conditions that may adversely affect the isolation region.