Invention Grant
- Patent Title: FinFET structure device
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Application No.: US15064618Application Date: 2016-03-09
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Publication No.: US09799770B2Publication Date: 2017-10-24
- Inventor: Ting-Yao Lin , Ling-Chun Chou , Kun-Hsien Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610096049 20160222
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/08 ; H01L29/167 ; H01L29/165
Abstract:
The present invention provides a FinFET device, including at least one fin structure, wherein the fin structure has a first-type well region, and a second-type well region adjacent to the first-type well region, a trench located in the fin structure and disposed between the first-type well region and the second-type well region, an insulating layer disposed in the trench, and a metal gate crossing over and disposed on the insulating layer.
Public/Granted literature
- US20170243977A1 FINFET STRUCTURE DEVICE Public/Granted day:2017-08-24
Information query
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