- 专利标题： High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture
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申请号： US14209740申请日： 2014-03-13
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公开(公告)号： US09799784B2公开(公告)日： 2017-10-24
- 发明人: Arnold Allenic , Zhigang Ban , Benyamin Buller , Markus Gloeckler , Benjamin Milliron , Xilin Peng , Rick C. Powell , Jigish Trivedi , Oomman K. Varghese , Jianjun Wang , Zhibo Zhao
- 申请人： FIRST SOLAR, INC
- 申请人地址： US OH Perrysburg
- 专利权人： First Solar, Inc.
- 当前专利权人： First Solar, Inc.
- 当前专利权人地址： US OH Perrysburg
- 代理机构： MacMillan, Sobanski & Todd, LLC
- 主分类号： H01L31/0296
- IPC分类号： H01L31/0296 ; H01L31/18 ; H01L31/0392 ; H01L31/073
摘要：
A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.