An apparatus is disclosed comprising a metal oxide semiconductor capacitor (MOSCAP) comprising one or more gate layers disposed over a contiguous radiation-sensitive insulating layer, wherein the contiguous radiation-sensitive insulating layer comprises one or more contacting dielectric layers. A method may be employed to measure a value of a radiation-induced capacitance response of a metal oxide semiconductor capacitor (MOSCAP) from multiple non-contacting gate layers disposed over a radiation-sensitive layer comprising of one or more contacting dielectric layers to thereby enhance a sensitivity and a resolution of a radiation response of the MOSCAP.