Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14636477Application Date: 2015-03-03
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Publication No.: US09806201B2Publication Date: 2017-10-31
- Inventor: Shunpei Yamazaki , Yoshinori Yamada , Yusuke Nonaka , Masashi Oota , Yoichi Kurosawa , Noritaka Ishihara , Takashi Hamada , Mitsuhiro Ichijo , Yuji Egi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-045530 20140307
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/1156
Abstract:
A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.
Public/Granted literature
- US20150255534A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-09-10
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