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Patent Agency Ranking
公开(公告)号：US20170350002A1
公开(公告)日：2017-12-07
申请号：US15537915
申请日：2015-12-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Yoshinori Yamada , Masashi Oota
CPC classification number: C23C14/3414 , C01G15/006 , C01G19/006 , C01P2006/80 , C04B35/01 , C04B35/117 , C04B35/44 , C04B35/453 , C04B35/457 , C04B35/505 , C04B35/64 , C04B2235/3217 , C04B2235/3225 , C04B2235/3286 , C04B2235/3293 , C04B2235/658 , C04B2235/6583 , C04B2235/661 , C04B2235/662 , C23C14/086 , C30B23/02 , C30B29/22 , H01J37/3426 , H01L29/786
Abstract: A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.
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公开(公告)号：US09806201B2
公开(公告)日：2017-10-31
申请号：US14636477
申请日：2015-03-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Yoshinori Yamada , Yusuke Nonaka , Masashi Oota , Yoichi Kurosawa , Noritaka Ishihara , Takashi Hamada , Mitsuhiro Ichijo , Yuji Egi
IPC: H01L29/786 , H01L27/1156
CPC classification number: H01L29/78693 , H01L27/1156 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.
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公开(公告)号：US10388520B2
公开(公告)日：2019-08-20
申请号：US14580566
申请日：2014-12-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Akihisa Shimomura , Yuhei Sato , Yasumasa Yamane , Yoshinori Yamada , Tetsunori Maruyama
Abstract: A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
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公开(公告)号：US10316404B2
公开(公告)日：2019-06-11
申请号：US15537915
申请日：2015-12-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Yoshinori Yamada , Masashi Oota
IPC: C23C14/34 , C01G15/00 , C23C14/08 , H01J37/34 , C01G9/02 , C01G9/00 , C01G19/02 , C04B35/453 , H01L29/786 , C01G19/00 , C30B23/02 , C30B29/22 , C04B35/01 , C04B35/117 , C04B35/44 , C04B35/457 , C04B35/505 , C04B35/64
Abstract: A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.
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公开(公告)号：US20150187575A1
公开(公告)日：2015-07-02
申请号：US14580566
申请日：2014-12-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Akihisa Shimomura , Yuhei Sato , Yasumasa Yamane , Yoshinori Yamada , Tetsunori Maruyama
CPC classification number: H01L21/02631 , C23C14/08 , C23C14/086 , C23C14/3414 , C23C14/35 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L29/66969 , H01L29/7869
Abstract: A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
Abstract translation: 形成氧化物半导体的方法包括通过使用溅射装置在衬底上沉积氧化物半导体层的步骤，其中在含有铟的元素M（铝，镓，钇或锡），锌和氧元素 设置面向靶的表面的基板，以及在靶的背面侧具有第一磁体和第二磁体的磁体单元。 在该方法中，在水平磁场的最大强度大于或等于350G且小于或等于2000G的条件下，在从基板的表面垂直距离的平面中进行沉积 磁体单位为10 mm。
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