Invention Grant
- Patent Title: Method for producing oxynitride film by atomic layer deposition process
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Application No.: US15188060Application Date: 2016-06-21
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Publication No.: US09809490B2Publication Date: 2017-11-07
- Inventor: Miyuki Nakai , Satoshi Shibata
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-133955 20150702; JP2015-152470 20150731; JP2016-021027 20160205
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C03C17/22 ; C23C16/30 ; C23C16/455 ; H01M10/0525 ; H01M10/0562

Abstract:
A method for producing an oxynitride film includes: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor.
Public/Granted literature
- US20170005358A1 METHOD FOR PRODUCING OXYNITRIDE FILM BY ATOMIC LAYER DEPOSITION PROCESS Public/Granted day:2017-01-05
Information query
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