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公开(公告)号：US12193247B2
公开(公告)日：2025-01-07
申请号：US18061233
申请日：2022-12-02
Inventor： Yoshihiro Sato , Satoshi Shibata , Ryota Sakaida
IPC: H01L27/146 , H10K30/30 , H10K39/32
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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2.发明授权公开(公告)号：US10693186B2
公开(公告)日：2020-06-23
申请号：US16100586
申请日：2018-08-10
Inventor： Satoshi Shibata , Yu Nishitani , Takuji Tsujita
IPC: H01M10/0562 , C23C16/455 , H01M10/054 , C23C16/30
Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.
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公开(公告)号：US10134935B2
公开(公告)日：2018-11-20
申请号：US15078576
申请日：2016-03-23
Inventor： Miyuki Nakai , Satoshi Shibata , Wataru Shinohara
IPC: H01M10/44 , H01L31/042 , H01L31/053 , H02S40/38 , H02J7/35 , H02S40/36 , H01L31/02 , H01L31/048 , H01L31/05
Abstract: In an embodiment, photoelectric conversion units (10) each include a package (12) accommodating a photoelectric conversion device (11). The package (12) has a front surface (12a) having a window (13); and a side surface (12c). The package (12) includes a first coupling portion (14) protruding from the side surface (12c) in a first direction X parallel to a light incident surface (11a) of the photoelectric conversion device (11), and a second coupling portion (15) recessed from the side surface (12c) in the first direction X. The first coupling portion (14) includes a first terminal (16) electrically connected with the photoelectric conversion device (11), and the second coupling portion (15) includes a second terminal (17) electrically connected with the photoelectric conversion device (11). The first coupling portion (14) and the second coupling portion (15) have shapes and sizes matching each other, and are coupled with each other by fitting.
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公开(公告)号：US10304828B2
公开(公告)日：2019-05-28
申请号：US15698019
申请日：2017-09-07
Inventor： Yoshihiro Sato , Ryota Sakaida , Satoshi Shibata , Taiji Noda
IPC: H01L27/092 , H01L27/146
Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.
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公开(公告)号：US11545525B2
公开(公告)日：2023-01-03
申请号：US17013289
申请日：2020-09-04
Inventor： Yoshihiro Sato , Satoshi Shibata , Ryota Sakaida
IPC: H01L27/146 , H01L27/30 , H01L51/42
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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Patent Agency Ranking
公开(公告)号：US12207571B2
公开(公告)日：2025-01-21
申请号：US17007382
申请日：2020-08-31
Inventor： Asami Nishikawa , Satoshi Shibata , Yu Nishitani , Tetsuya Asano , Takuji Tsujita , Yuta Sugimoto
Abstract: An interconnect structure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.
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7.发明授权公开(公告)号：US10074872B2
公开(公告)日：2018-09-11
申请号：US15371063
申请日：2016-12-06
Inventor： Satoshi Shibata , Yu Nishitani , Takuji Tsujita
IPC: H01M10/0562 , H01M10/054 , C23C16/455
CPC classification number: H01M10/0562 , C23C16/308 , C23C16/45531 , C23C16/45555 , C23C16/45561 , H01M10/054 , H01M2300/0071
Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.
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公开(公告)号：US09809490B2
公开(公告)日：2017-11-07
申请号：US15188060
申请日：2016-06-21
Inventor： Miyuki Nakai , Satoshi Shibata
IPC: C23C16/00 , C03C17/22 , C23C16/30 , C23C16/455 , H01M10/0525 , H01M10/0562
CPC classification number: C03C17/22 , C03C2217/28 , C03C2218/152 , C23C16/308 , C23C16/45527 , C23C16/45531 , H01M10/0525 , H01M10/0562
Abstract: A method for producing an oxynitride film includes: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor.
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公开(公告)号：US10910467B2
公开(公告)日：2021-02-02
申请号：US16801580
申请日：2020-02-26
Inventor： Takeyoshi Tokuhara , Satoshi Shibata
IPC: H01L49/02 , H01L21/02 , H01L27/30 , H01L27/146
Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.
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公开(公告)号：US10446549B2
公开(公告)日：2019-10-15
申请号：US16384575
申请日：2019-04-15
Inventor： Yoshihiro Sato , Ryota Sakaida , Satoshi Shibata , Taiji Noda
IPC: H01L27/092 , H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.
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