Invention Grant
- Patent Title: Lid structure for a semiconductor device package and method for forming the same
-
Application No.: US14985504Application Date: 2015-12-31
-
Publication No.: US09812410B2Publication Date: 2017-11-07
- Inventor: Kuan-Lin Ho , Chin-Liang Chen , Chi-Yang Yu , Yu-Chih Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/58 ; H01L23/00 ; H01L21/48 ; H01L23/367 ; H01L21/78 ; H01L23/498 ; H01L23/31 ; H01L25/065
Abstract:
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a die structure formed over the substrate. The semiconductor device structure also includes a lid structure formed over the die structure. The lid structure includes a top portion with a top length and a bottom portion with a bottom length, and the top length is greater than the bottom length. The semiconductor device structure also includes a package layer formed between the lid structure and the die structure, and a sidewall of the bottom portion of the lid structure is not aligned with a sidewall of the die structure.
Public/Granted literature
- US20170194268A1 Lid Structure for a Semiconductor Device Package and Method for Forming the Same Public/Granted day:2017-07-06
Information query
IPC分类:
