- 专利标题: Power semiconductor module
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申请号: US14672467申请日: 2015-03-30
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公开(公告)号: US09812431B2公开(公告)日: 2017-11-07
- 发明人: Tetsuya Inaba , Yoshinari Ikeda
- 申请人: Fuji Electric Co., Ltd.
- 申请人地址: JP Kanagawa
- 专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kanagawa
- 代理机构: Chen Yoshimura LLP
- 优先权: JP2014-075640 20140401
- 主分类号: H01L25/07
- IPC分类号: H01L25/07 ; H01L23/049 ; H01L23/492 ; H01L23/498 ; H01L23/24 ; H01L23/373
摘要:
A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board.
公开/授权文献
- US20150279753A1 POWER SEMICONDUCTOR MODULE 公开/授权日:2015-10-01
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