- Patent Title: Integrated LED light-emitting device and fabrication method thereof
-
Application No.: US15289145Application Date: 2016-10-08
-
Publication No.: US09812613B2Publication Date: 2017-11-07
- Inventor: Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201310196146 20130524
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L33/00 ; H01L33/38 ; H01L33/48 ; H01L27/15 ; H01L33/44 ; H01L21/78 ; H01L25/075 ; H01L33/62 ; H01L23/00
Abstract:
A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.
Public/Granted literature
- US20170025580A1 Integrated LED Light-Emitting Device and Fabrication Method Thereof Public/Granted day:2017-01-26
Information query
IPC分类:
