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公开(公告)号：US11990577B2
公开(公告)日：2024-05-21
申请号：US17465075
申请日：2021-09-02
Inventor： Shaohua Huang , Xiaoqiang Zeng , Jianfeng Yang , Canyuan Zhang
IPC: H01L33/62 , H01L25/075 , H01L25/16 , H01L33/64
CPC classification number: H01L33/62 , H01L25/0753 , H01L25/167 , H01L33/647 , H01L2933/0066 , H01L2933/0075
Abstract: A light-emitting device includes a lead frame having a first surface on which a patterned conductive layer is provided, and a light-emitting element. The light-emitting element includes an insulating substrate formed on the first surface, a plurality of light-emitting units formed on the insulating substrate, at least one first electrode, at least one second electrode and at least a pair of bonding wires. The first and second electrodes are respectively placed in electrical connection with a first one and a second one of the light-emitting units, and are disposed outward of the light-emitting units. Each of the pair of bonding wires is disposed to electrically connect a respective one of the first and second electrodes to the patterned conductive layer.
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公开(公告)号：US09159895B2
公开(公告)日：2015-10-13
申请号：US14394851
申请日：2013-03-19
Inventor： Xiaoqiang Zeng , Shunping Chen , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
IPC: H01L33/00 , H01L33/62 , H01L25/075 , H01L33/20 , H01L33/44
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/20 , H01L33/44 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
Abstract: A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.
Abstract translation: 一种垂直高压发光器件及其制造方法。 两个相邻的发光二极管（LED）的极性通过区域激光剥离和管芯接合而被反转，并且极性反转的两个二极管被布置在包括接合金属层（320）的绝缘基板上。 导电线（140）分布在发光器件的表面上，使得单个LED单元（330）具有垂直结构，并且多个LED串联连接以形成高压LED，从而解决问题 的水平结构的低发光效率和大的热阻。
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公开(公告)号：US11309297B2
公开(公告)日：2022-04-19
申请号：US16995551
申请日：2020-08-17
Inventor： Xiaoqiang Zeng , Shaohua Huang , Jianfeng Yang , Canyuan Zhang
Abstract: A light-emitting diode (LED) chip includes a semiconductor epitaxial structure, an insulating substrate, a first metal layer, and a second metal layer. The semiconductor epitaxial structure includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a light-emitting layer interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The insulating substrate has two opposite surfaces, and the first and second metal layers are respectively disposed on the two surfaces of the insulating substrate. An LED device and an LED lamp including the LED chip are also disclosed.
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公开(公告)号：US09190569B2
公开(公告)日：2015-11-17
申请号：US14583185
申请日：2014-12-25
Inventor： Xiaoqiang Zeng , Shunping Chen , Qunfeng Pan , Shaohua Huang
CPC classification number: H01L33/20 , H01L27/15 , H01L33/005 , H01L33/145 , H01L33/36 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode. A conductive connection portion on the n-type semiconductor layer connects the electrode region of the n-type semiconductor layer and the light-emitting region, realizing vertical current injection into the light-emitting epitaxial layer when an external power is connected.
Abstract translation: 倒装芯片发光二极管（LED）包括：具有P型焊盘电极和N型焊盘电极的基板; 安装在衬底上的发光外延层倒装芯片，包括从上到下的n型半导体层，有源层和p型半导体层。 n型半导体层被分为发光区域，隔离区域和电极区域。 发光区域和电极区域通过隔离区域电隔离。 有源层和p型半导体层位于发光区域的下方。 p型半导体层与P型焊盘电极连接。 n型半导体层的电极区域与N型焊盘电极连接。 n型半导体层上的导体连接部分连接n型半导体层的电极区域和发光区域，当连接外部电源时实现垂直电流注入发光外延层。
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公开(公告)号：US20210320233A1
公开(公告)日：2021-10-14
申请号：US17356755
申请日：2021-06-24
Inventor： Hailin Rao , Shaohua Huang , Xiaoqiang Zeng , Lixun Yang , Shuiqing LI , Linrong CAI
Abstract: A light-emitting device includes an LED chip disposed on a supporting component. The LED chip includes a semiconductor stack formed on a substrate, a first electrode, and a second electrode. A light-blocking layer fills the supporting component to cover a lateral side of the LED chip and expose a top chip surface of the LED chip. The light-blocking layer has a top surface not lower than the top chip surface of the LED chip. A height difference among the top chip surface, the top surface of the light-blocking layer and a top end of the supporting component is less than 10 μm. A top light exit port defined by the light-blocking layer to expose the top chip surface has a cross sectional area not larger than that of the top chip surface.
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Patent Agency Ranking
公开(公告)号：US09812613B2
公开(公告)日：2017-11-07
申请号：US15289145
申请日：2016-10-08
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
IPC: H01L29/205 , H01L33/00 , H01L33/38 , H01L33/48 , H01L27/15 , H01L33/44 , H01L21/78 , H01L25/075 , H01L33/62 , H01L23/00
CPC classification number: H01L33/385 , H01L21/78 , H01L24/14 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/005 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16245 , H01L2924/01322 , H01L2924/12041 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.
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公开(公告)号：US09472726B2
公开(公告)日：2016-10-18
申请号：US14748921
申请日：2015-06-24
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
IPC: H01L33/00 , H01L33/38 , H01L33/48 , H01L27/15 , H01L33/44 , H01L21/78 , H01L25/075 , H01L23/00 , H01L33/62
CPC classification number: H01L33/385 , H01L21/78 , H01L24/14 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/005 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16245 , H01L2924/01322 , H01L2924/12041 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability.
Abstract translation: 集成LED发光装置包括：具有上表面和下表面的至少两个相互隔离的LED发光外延单元，其中上表面是发光表面; 在LED发光外延单元的下表面上方具有足够的厚度，用于支撑LED外延单元并连接到每个LED发光外延单元以形成没有高度差的连接电路平面; 电极焊盘层分为P电极区域和N电极区域。 LED发光外延单元构成串联，并联或串联并联电路。 本文公开的实施例可以有效地改善包装焊接，电极阴影和布线稳定性差的问题。
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8.发明授权公开(公告)号：US09269698B2
公开(公告)日：2016-02-23
申请号：US14358190
申请日：2012-12-21
Inventor： Xiaoqiang Zeng , Shunping Chen , Shaohua Huang , Qunfeng Pan
CPC classification number: H01L25/0753 , H01L25/50 , H01L27/156 , H01L33/0079 , H01L33/38 , H01L2924/0002 , H01L2924/00
Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.
Abstract translation: 本发明公开了一种AC型垂直发光元件及其制造方法，其通过区域激光剥离和芯片接合实现两个LED的极性反转。 两个LED放置在导电衬底（例如Si衬底）上; 因此，两个LED的接合焊盘位于导电基板的背面和两个LED的发光表面上，从而克服了传统横向结构的低发光效率和高热阻的问题。
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公开(公告)号：US10559732B2
公开(公告)日：2020-02-11
申请号：US15368599
申请日：2016-12-03
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
Abstract: A surface-mounted light-emitting device is fabricated by epitaxial growth: forming the LED epitaxial structure over a growth substrate through epitaxial growth; chip fabrication: determining P and N electrode regions and an isolating region over the LED epitaxial structure surface and fabricating the P and N electrode pads and the insulator over the P and N electrode regions and the isolating region, wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit; removing the growth substrate and unitizing the LED epitaxial structure to form the chip; and SMT packaging: providing the supporting substrate and directly mounting the P and N electrode pads of the chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device.
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公开(公告)号：US09666757B2
公开(公告)日：2017-05-30
申请号：US14588001
申请日：2014-12-31
Inventor： Xiaoqiang Zeng , Chih-Wei Chao , Shunping Chen , Jianjian Yang , Daquan Lin
CPC classification number: H01L33/145 , H01L33/005 , H01L33/0079 , H01L33/20 , H01L33/36 , H01L33/38 , H01L2933/0016
Abstract: A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.
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