- Patent Title: Semiconductor sensing structure and manufacturing method thereof
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Application No.: US14739419Application Date: 2015-06-15
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Publication No.: US09815685B2Publication Date: 2017-11-14
- Inventor: Yi-Hsien Chang , Chun-Wen Cheng , Chun-Ren Cheng , Shih-Wei Lin , Wei-Cheng Shen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81B3/00 ; B81C1/00 ; H04R19/00

Abstract:
A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.
Public/Granted literature
- US20160362292A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-12-15
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