Invention Grant
- Patent Title: Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors
-
Application No.: US15146459Application Date: 2016-05-04
-
Publication No.: US09825131B2Publication Date: 2017-11-21
- Inventor: Johannes Georg Laven , Moriz Jelinek , Hans-Joachim Schulze , Werner Schustereder , Michael Stadtmueller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Baker Botts L.L.P.
- Priority: DE102015107085 20150506
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/06 ; H01L21/324 ; H01L21/8234 ; H01L29/739
Abstract:
A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.
Public/Granted literature
Information query
IPC分类:
