发明授权
- 专利标题： Process flow for manufacturing semiconductor on insulator structures in parallel
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申请号： US15435428申请日： 2017-02-17
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公开(公告)号： US09831115B2公开(公告)日： 2017-11-28
- 发明人: Igor Peidous , Andrew M. Jones , Srikanth Kommu , Jeffrey L. Libbert
- 申请人： SunEdison Semiconductor Limited (UEN201334164H)
- 申请人地址： SG
- 专利权人： SunEdison Semiconductor Limited (UEN201334164H)
- 当前专利权人： SunEdison Semiconductor Limited (UEN201334164H)
- 当前专利权人地址： SG
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/324 ; H01L29/04 ; H01L29/40 ; H01L29/30 ; H01L21/28 ; H01L21/18 ; H01L21/265
摘要：
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).
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