- 专利标题: FETS and methods of forming FETs
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申请号: US15002077申请日: 2016-01-20
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公开(公告)号: US09831116B2公开(公告)日: 2017-11-28
- 发明人: Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Li-Li Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/764
- IPC分类号: H01L21/764 ; H01L29/08 ; H01L29/16 ; H01L29/66 ; H01L29/161 ; H01L29/165 ; H01L29/78 ; H01L29/06 ; H01L29/24
摘要:
An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
公开/授权文献
- US20170076973A1 FETS AND METHODS OF FORMING FETS 公开/授权日:2017-03-16
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