发明授权
- 专利标题: Reflective photomask, method for manufacturing same and program for making mask pattern
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申请号: US14844469申请日: 2015-09-03
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公开(公告)号: US09841667B2公开(公告)日: 2017-12-12
- 发明人: Takashi Kamo
- 申请人: Toshiba Memory Corporation
- 申请人地址: JP Tokyo
- 专利权人: Toshiba Memory Corporation
- 当前专利权人: Toshiba Memory Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2015-051706 20150316
- 主分类号: G03F1/24
- IPC分类号: G03F1/24 ; G03F1/70
摘要:
A reflective photomask includes a substrate and a reflective layer on the substrate. The reflective layer has a top surface opposite to the substrate and a reflectivity distribution on the top surface. The reflective layer includes mask patterns, the mask patterns having sizes depending on the reflectivity distribution. The mask patterns include a first pattern and a second pattern, the first pattern having a first space size smaller than a second space size of the second pattern. The first pattern is provided in a first region of the top surface, and the second pattern is provided in a second region of the top surface, wherein a reflectivity in the first region is lower than a reflectivity in the second region.
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