Invention Grant
- Patent Title: Semiconductor device allowing metal layer routing formed directly under metal pad
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Application No.: US15432906Application Date: 2017-02-14
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Publication No.: US09847294B2Publication Date: 2017-12-19
- Inventor: Chun-Liang Chen , Tien-Chang Chang , Chien-Chih Lin
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L23/00 ; H01L23/522 ; H01L27/088
Abstract:
The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.
Public/Granted literature
- US20170162505A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-06-08
Information query
IPC分类:
